Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	APT35GN120B(G)
Standard Package	1
Manufacturer	Microsemi Corporation
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	94A
Current - Collector Pulsed (Icm)	105A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 35A
Power - Max	379W
Switching Energy	2.315mJ (off)
Input Type	Standard
Gate Charge	220nC
Td (on/off) @ 25°C	24ns/300ns
Test Condition	800V, 35A, 2.2Ohm, 15V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 [B]

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IKW40N65H5FKSA1	Infineon Technologies, IGBT 650V 74A 255W Through Hole PG-TO247-3, TrenchStop®	View
STGWT30H65FB	STMicroelectronics, IGBT Trench Field Stop 650V 30A 260W Through Hole TO-3P,	View
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IKW30N60H3FKSA1	Infineon Technologies, IGBT Trench Field Stop 600V 60A 187W Through Hole PG-TO247-3, TrenchStop®	View

APT35GN120BG

Part NumberAPT35GN120BG