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APT8M100B

APT8M100B

Part NumberAPT8M100B

ManufacturerMicrosemi Corporation

DescriptionMOSFET N-CH 1000V 8A TO-247

DatasheetAPT8M100(B,S)

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 8A (Tc) 290W (Tc) Through Hole TO-247 [B]

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APT8M100B - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	APT8M100(B,S)
Standard Package	1
Manufacturer	Microsemi Corporation
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.8Ohm @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1885pF @ 25V
FET Feature	-
Power Dissipation (Max)	290W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 [B]
Package / Case	TO-247-3

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