APTM100UM45DAG
APTM100UM45DAG
Part Number APTM100UM45DAG Description MOSFET N-CH 1000V 215A SP6 Package / Case SP6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1000V 215A (Tc) 5000W (Tc) Chassis Mount SP6
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APTM100UM45DAG - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet APTM100UM45DAG Standard Package 1 Manufacturer Microsemi Corporation Series POWER MOS 7® Packaging Bulk Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 215A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 52mOhm @ 107.5A, 10V Vgs(th) (Max) @ Id 5V @ 30mA Gate Charge (Qg) (Max) @ Vgs 1602nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 42700pF @ 25V FET Feature - Power Dissipation (Max) 5000W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SP6 Package / Case SP6
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