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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet AUIRLS8409-7P
Standard Package 1000
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, HEXFET®
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 266nC @ 4.5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 16488pF @ 25V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (7-Lead)
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
IRFS7534TRL7PP
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SISA10DN-T1-GE3
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BUK7210-55B,118
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ON Semiconductor, N-Channel 30V 8.4A (Ta), 68A (Tc) 1.04W (Ta), 75W (Tc) Surface Mount DPAK,
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Diodes Incorporated, N-Channel 100V 18A (Tc) 37W (Tc) Surface Mount TO-252,
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STB35N60DM2
STMicroelectronics, N-Channel 600V 28A (Tc) 210W (Tc) Surface Mount D2PAK, MDmesh™ DM2
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IXTH20N65X
IXYS, N-Channel 650V 20A (Tc) 320W (Tc) Through Hole TO-247 (IXTH),
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