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BD809G

BD809G

Part NumberBD809G

ManufacturerON Semiconductor

DescriptionTRANS NPN 80V 10A TO-220AB

DatasheetBD809,810

Package / CaseTO-220-3

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Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 80V 10A 1.5MHz 90W Through Hole TO-220AB

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BD809G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	BD809,810
Standard Package	50
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
Transistor Type	NPN
Current - Collector (Ic) (Max)	10A
Voltage - Collector Emitter Breakdown (Max)	80V
Vce Saturation (Max) @ Ib, Ic	1.1V @ 300mA, 3A
Current - Collector Cutoff (Max)	1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 4A, 2V
Power - Max	90W
Frequency - Transition	1.5MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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