Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	RF Discretes Selection Guide
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	24GHz
Noise Figure (dB Typ @ f)	1.25dB @ 1.8GHz
Gain	15.5dB
Power - Max	450mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 50mA, 4V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	PG-SOT343-4
Base Part Number	BFP450

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2SC5227A-4-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP,	View
MCH4020-TL-H	ON Semiconductor, RF Transistor NPN 8V 150mA 16GHz 400mW Surface Mount 4-MCPH,	View
BFP740FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount 4-TSFP,	View
MCH4014-TL-H	ON Semiconductor, RF Transistor NPN 12V 30mA 10GHz 350mW Surface Mount 4-MCPH,	View
BFQ18A,115	NXP USA Inc., RF Transistor NPN 18V 150mA 4GHz 1W Surface Mount SOT-89-3,	View
MMBTH11	ON Semiconductor, RF Transistor NPN 25V 50mA 650MHz 225mW Surface Mount SOT-23-3 (TO-236),	View
BFU790F,115	NXP USA Inc., RF Transistor NPN 2.8V 100mA 25GHz 234mW Surface Mount 4-DFP,	View
BFP193E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT143-4,	View
2SC5065-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount USM,	View
BFU690F,115	NXP USA Inc., RF Transistor NPN 5.5V 100mA 18GHz 230mW Surface Mount 4-DFP,	View

BFP450H6327XTSA1

Part NumberBFP450H6327XTSA1