Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFR183
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain	17.5dB
Power - Max	450mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 15mA, 8V
Current - Collector (Ic) (Max)	65mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3
Base Part Number	BFR183

BFP840ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 2.25V 35mA 80GHz 75mW Surface Mount SOT-343,	View
2SC5490A-TL-H	ON Semiconductor, RF Transistor NPN 10V 30mA 8GHz 100mW Surface Mount 3-SSFP,	View
BFT25A,215	NXP USA Inc., RF Transistor NPN 5V 6.5mA 5GHz 32mW Surface Mount TO-236AB (SOT23),	View
15GN03MA-TL-E	ON Semiconductor, RF Transistor NPN 10V 70mA 1.5GHz 400mW Surface Mount 3-MCP,	View
MT3S113TU,LF	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 11.2GHz 900mW Surface Mount UFM,	View
BFP405H6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 25mA 25GHz 75mW Surface Mount SOT-343,	View
BFT25A,215	NXP USA Inc., RF Transistor NPN 5V 6.5mA 5GHz 32mW Surface Mount TO-236AB (SOT23),	View
BLT81,115	NXP USA Inc., RF Transistor NPN 9.5V 500mA 900MHz 2W Surface Mount SOT-223,	View
BFR193WH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT323-3,	View
2SC5087YTE85LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 150mW Surface Mount SMQ,	View
2SC5245A-4-TL-E	ON Semiconductor, RF Transistor NPN 10V 30mA 8GHz 150mW Surface Mount 3-MCP,	View
BFY90	Central Semiconductor Corp, RF Transistor NPN 15V 25mA 1.4GHz 200mW Through Hole TO-72,	View

BFR183E6327HTSA1

Part NumberBFR183E6327HTSA1