Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFU590G Datasheet
Standard Package	1
Manufacturer	NXP USA Inc.
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8.5GHz
Noise Figure (dB Typ @ f)	-
Gain	8dB
Power - Max	2W
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 80mA, 8V
Current - Collector (Ic) (Max)	200mA
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223
Base Part Number	BFU590

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BFU590GX

Part NumberBFU590GX