BSB014N04LX3GXUMA1
BSB014N04LX3GXUMA1
Part Number BSB014N04LX3GXUMA1 Description MOSFET N-CH 40V 180A 2WDSON Package / Case 3-WDSONUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 36A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
To learn about the specification of BSB014N04LX3GXUMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSB014N04LX3GXUMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSB014N04LX3GXUMA1.
We are offering BSB014N04LX3GXUMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSB014N04LX3GXUMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSB014N04LX3 G Standard Package 5000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 36A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 196nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 16900pF @ 20V FET Feature - Power Dissipation (Max) 2.8W (Ta), 89W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MG-WDSON-2, CanPAK M™ Package / Case 3-WDSON
BSB014N04LX3GXUMA1 - Related ProductsMore >>
FQD16N25CTM ON Semiconductor, N-Channel 250V 16A (Tc) 160W (Tc) Surface Mount D-Pak, QFET®
View
IRFSL3006PBF Infineon Technologies, N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-262, HEXFET®
View
STB75NF20 STMicroelectronics, N-Channel 200V 75A (Tc) 190W (Tc) Surface Mount D2PAK, STripFET™
View
IXTP3N50D2 IXYS, N-Channel 500V 3A (Tc) 125W (Tc) Through Hole TO-220AB,
View
IRFB23N20DPBF Infineon Technologies, N-Channel 200V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-220AB, HEXFET®
View
FCH104N60F ON Semiconductor, N-Channel 600V 37A (Tc) 357W (Tc) Through Hole TO-247-3, HiPerFET™, Polar™
View
FDN357N ON Semiconductor, N-Channel 30V 1.9A (Ta) 500mW (Ta) Surface Mount SuperSOT-3,
View
IRFU214PBF Vishay Siliconix, N-Channel 250V 2.2A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA,
View
STD110N8F6 STMicroelectronics, N-Channel 80V 80A (Tc) 167W (Tc) Surface Mount DPAK, STripFET™ F6
View
FDMC86183 ON Semiconductor, N-Channel 100V 47A (Tc) 52W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33,
View
PSMNR90-30BL,118 Nexperia USA Inc., N-Channel 30V 120A (Tc) 306W (Tc) Surface Mount D2PAK,
View
IRF6717MTRPBF Infineon Technologies, N-Channel 25V 38A (Ta), 200A (Tc) 2.8W (Ta), 96W (Tc) Surface Mount DIRECTFET™ MX, HEXFET®
View
BSB014N04LX3GXUMA1 - Tags
English
