BSB028N06NN3GXUMA1
BSB028N06NN3GXUMA1
Part Number BSB028N06NN3GXUMA1 Description MOSFET N-CH 60V 22A WDSON-2 Package / Case 3-WDSONUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 22A (Ta), 90A (Tc) 2.2W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
To learn about the specification of BSB028N06NN3GXUMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSB028N06NN3GXUMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSB028N06NN3GXUMA1.
We are offering BSB028N06NN3GXUMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSB028N06NN3GXUMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSB028N06NN3 G Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 22A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4V @ 102µA Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 30V FET Feature - Power Dissipation (Max) 2.2W (Ta), 78W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MG-WDSON-2, CanPAK M™ Package / Case 3-WDSON
BSB028N06NN3GXUMA1 - Related ProductsMore >>
IPA083N10N5XKSA1 Infineon Technologies, N-Channel 100V 44A (Tc) 36W (Tc) Through Hole PG-TO220-FP, OptiMOS™
View
NVR4003NT3G ON Semiconductor, N-Channel 30V 500mA (Ta) 690mW (Ta) Surface Mount SOT-23 (TO-236AB),
View
IPD60R1K4C6ATMA1 Infineon Technologies, N-Channel 600V 3.2A (Tc) 28.4W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C6
View
SIA466EDJ-T1-GE3 Vishay Siliconix, N-Channel 20V 25A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
View
IXTA6N50D2 IXYS, N-Channel 500V 6A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA),
View
STD3NK100Z STMicroelectronics, N-Channel 1000V 2.5A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH™
View
BSS123TA Diodes Incorporated, N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3,
View
SUD50N06-09L-E3 Vishay Siliconix, N-Channel 60V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
View
PSMN4R4-80PS,127 Nexperia USA Inc., N-Channel 80V 100A (Tc) 306W (Tc) Through Hole TO-220AB,
View
FDS6630A ON Semiconductor, N-Channel 30V 6.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
FQA11N90C-F109 ON Semiconductor, N-Channel 900V 11A (Tc) 300W (Tc) Through Hole TO-3P, QFET®
View
IRFB42N20DPBF Infineon Technologies, N-Channel 200V 44A (Tc) 2.4W (Ta), 330W (Tc) Through Hole TO-220AB, HEXFET®
View
BSB028N06NN3GXUMA1 - Tags
English
