BSC009NE2LSATMA1
BSC009NE2LSATMA1
Part Number BSC009NE2LSATMA1
Description MOSFET N-CH 25V 41A TDSON-8
Package / Case 8-PowerTDFN
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Lead Time To be Confirmed
Detailed Description N-Channel 25V 41A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7
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BSC009NE2LSATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSC009NE2LS
Standard Package 5000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 41A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 126nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 12V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-7
Package / Case 8-PowerTDFN
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