Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ BSC082N10LSGATMA1

BSC082N10LSGATMA1

BSC082N10LSGATMA1

Part NumberBSC082N10LSGATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 100A 8TDSON

DatasheetBSC082N10LS G

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 13.8A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1

To learn about the specification of BSC082N10LSGATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSC082N10LSGATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSC082N10LSGATMA1.
We are offering BSC082N10LSGATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

BSC082N10LSGATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSC082N10LS G
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	13.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	2.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs	104nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7400pF @ 50V
FET Feature	-
Power Dissipation (Max)	156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN

BSC082N10LSGATMA1 - Related Products

	APT5010JLLU2	Microsemi Corporation, N-Channel 500V 41A (Tc) 378W (Tc) Chassis Mount SOT-227,	View
	SI4100DY-T1-E3	Vishay Siliconix, N-Channel 100V 6.8A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®	View
	STB18N60M6	STMicroelectronics, N-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D2PAK, MDmesh™ M6	View
	SUP60030E-GE3	Vishay Siliconix, N-Channel 80V 120A (Tc) 375W (Tc) Through Hole TO-220AB, TrenchFET®	View
	IRFB4332PBF	Infineon Technologies, N-Channel 250V 60A (Tc) 390W (Tc) Through Hole TO-220AB, HEXFET®	View
	STP110N8F7	STMicroelectronics, N-Channel 80V 80A (Tc) 170W (Tc) Through Hole TO-220, STripFET™	View
	FDMC8554	ON Semiconductor, N-Channel 20V 16.5A (Tc) 2W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	SIR668ADP-T1-RE3	Vishay Siliconix, N-Channel 100V 93.6A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	SQJA88EP-T1_GE3	Vishay Siliconix, N-Channel 40V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	DN2530N8-G	Microchip Technology, N-Channel 300V 200mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	LND150K1-G	Microchip Technology, N-Channel 500V 13mA (Tj) 360mW (Ta) Surface Mount SOT-23-3,	View
	FDD850N10L	ON Semiconductor, N-Channel 100V 15.7A (Tc) 50W (Tc) Surface Mount DPAK, PowerTrench®	View

BSC082N10LSGATMA1 - Tags

BSC082N10LSGATMA1 BSC082N10LSGATMA1 PDF BSC082N10LSGATMA1 datasheet BSC082N10LSGATMA1 specification BSC082N10LSGATMA1 image BSC082N10LSGATMA1 India Renesas Electronics India BSC082N10LSGATMA1 buy BSC082N10LSGATMA1 BSC082N10LSGATMA1 price BSC082N10LSGATMA1 distributor BSC082N10LSGATMA1 supplier BSC082N10LSGATMA1 wholesales