Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ BSC123N10LSGATMA1

BSC123N10LSGATMA1

BSC123N10LSGATMA1

Part NumberBSC123N10LSGATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 71A TDSON-8

DatasheetBSC123N10LS G

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 10.6A (Ta), 71A (Tc) 114W (Tc) Surface Mount PG-TDSON-8-1

To learn about the specification of BSC123N10LSGATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSC123N10LSGATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSC123N10LSGATMA1.
We are offering BSC123N10LSGATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

BSC123N10LSGATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSC123N10LS G
Standard Package	5000
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	10.6A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.4V @ 72µA
Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4900pF @ 50V
FET Feature	-
Power Dissipation (Max)	114W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN

BSC123N10LSGATMA1 - Related Products

	IXTT140N10P	IXYS, N-Channel 100V 140A (Tc) 600W (Tc) Surface Mount TO-268, PolarHT™	View
	DN2450N8-G	Microchip Technology, N-Channel 500V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),	View
	SIHP28N65EF-GE3	Vishay Siliconix, N-Channel 650V 28A (Tc) 250W (Tc) Through Hole TO-220AB,	View
	TK32A12N1,S4X	Toshiba Semiconductor and Storage, N-Channel 120V 32A (Tc) 30W (Tc) Through Hole TO-220SIS, U-MOSVIII-H	View
	IRFR020TRPBF	Vishay Siliconix, N-Channel 60V 14A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	IPP65R125C7XKSA1	Infineon Technologies, N-Channel 650V 18A (Tc) 101W (Tc) Through Hole PG-TO220-3, CoolMOS™ C7	View
	FDMC86012	ON Semiconductor, N-Channel 30V 23A (Ta) 2.3W (Ta), 54W (Tc) Surface Mount Power33, PowerTrench®	View
	FDMS86350	ON Semiconductor, N-Channel 80V 25A (Ta), 130A (Tc) 2.7W (Ta), 156W (Tc) Surface Mount Power56, PowerTrench®	View
	SI2366DS-T1-GE3	Vishay Siliconix, N-Channel 30V 5.8A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SUM90220E-GE3	Vishay Siliconix, N-Channel 200V 64A (Tc) 230W (Tc) Surface Mount D²PAK (TO-263), ThunderFET®	View
	IPW65R070C6FKSA1	Infineon Technologies, N-Channel 650V 53.5A (Tc) 391W (Tc) Through Hole PG-TO247-3, CoolMOS™	View
	PSMN2R8-80BS,118	Nexperia USA Inc., N-Channel 80V 120A (Tc) 306W (Tc) Surface Mount D2PAK,	View

BSC123N10LSGATMA1 - Tags

BSC123N10LSGATMA1 BSC123N10LSGATMA1 PDF BSC123N10LSGATMA1 datasheet BSC123N10LSGATMA1 specification BSC123N10LSGATMA1 image BSC123N10LSGATMA1 India Renesas Electronics India BSC123N10LSGATMA1 buy BSC123N10LSGATMA1 BSC123N10LSGATMA1 price BSC123N10LSGATMA1 distributor BSC123N10LSGATMA1 supplier BSC123N10LSGATMA1 wholesales