BSC350N20NSFDATMA1
BSC350N20NSFDATMA1
Part Number BSC350N20NSFDATMA1
Description MOSFET N-CH 200V 35A 8TDSON
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 200V 35A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-1
To learn about the specification of BSC350N20NSFDATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSC350N20NSFDATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSC350N20NSFDATMA1.
We are offering BSC350N20NSFDATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSC350N20NSFDATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSC350N20NSFD
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 100V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
BSC350N20NSFDATMA1 - Related ProductsMore >>
STF26NM60N
STMicroelectronics, N-Channel 600V 20A (Tc) 35W (Tc) Through Hole TO-220FP, MDmesh™ II
View
FQD5N60CTM
ON Semiconductor, N-Channel 600V 2.8A (Tc) 2.5W (Ta), 49W (Tc) Surface Mount D-Pak, QFET®
View
IPL60R285P7AUMA1
Infineon Technologies, N-Channel 650V 13A (Tc) 59W (Tc) Surface Mount PG-VSON-4, CoolMOS™ P7
View
STP110N10F7
STMicroelectronics, N-Channel 100V 110A (Tc) 150W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VII
View
RYC002N05T316
Rohm Semiconductor, N-Channel 50V 200mA (Ta) 350mW (Tc) Surface Mount SST3,
View
TK17N65W,S1F
Toshiba Semiconductor and Storage, N-Channel 650V 17.3A (Ta) 165W (Tc) Through Hole TO-247, DTMOSIV
View
R6015KNX
Rohm Semiconductor, N-Channel 600V 15A (Tc) 60W (Tc) Through Hole TO-220FM,
View
IPD082N10N3GATMA1
Infineon Technologies, N-Channel 100V 80A (Tc) 125W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
IPB180N04S401ATMA1
Infineon Technologies, N-Channel 40V 180A (Tc) 188W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™
View
2SK3541T2L
Rohm Semiconductor, N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount VMT3,
View
SI4386DY-T1-E3
Vishay Siliconix, N-Channel 30V 11A (Ta) 1.47W (Ta) Surface Mount 8-SO, TrenchFET®
View
PSMN6R3-120ESQ
Nexperia USA Inc., N-Channel 120V 70A (Tc) 405W (Tc) Through Hole I2PAK,
View
BSC350N20NSFDATMA1 - Tags