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BSM080D12P2C008


BSM080D12P2C008

Part NumberBSM080D12P2C008

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Description

Datasheet

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Detailed Description

BSM080D12P2C008 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
Series-
PackagingTray
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4V @ 13.2mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds800pF @ 10V
Power - Max600W
Operating Temperature175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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