BSM180C12P2E202
BSM180C12P2E202
Part Number BSM180C12P2E202 Description BSM180C12P2E202 IS A SIC (SILICO Package / Case ModuleUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1200V 204A (Tc) 1360W (Tc) Chassis Mount Module
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BSM180C12P2E202 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSM180C12P2E202 Datasheet Standard Package 4 Manufacturer Rohm Semiconductor Series - Packaging Tray Part Status Active FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 204A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 4V @ 35.2mA Vgs (Max) +22V, -6V Input Capacitance (Ciss) (Max) @ Vds 20000pF @ 10V FET Feature - Power Dissipation (Max) 1360W (Tc) Operating Temperature 175°C (TJ) Mounting Type Chassis Mount Supplier Device Package Module Package / Case Module
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