Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SCT3017ALHR
Standard Package	30
Manufacturer	Rohm Semiconductor
Series	Automotive, AEC-Q101
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	118A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	22.1mOhm @ 47A, 18V
Vgs(th) (Max) @ Id	5.6V @ 23.5mA
Gate Charge (Qg) (Max) @ Vgs	172nC @ 18V
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	2884pF @ 500V
FET Feature	-
Power Dissipation (Max)	427W
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247N
Package / Case	TO-247-3

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SCT3022ALHRC11	Rohm Semiconductor, N-Channel 650V 93A (Tc) 339W Through Hole TO-247N, Automotive, AEC-Q101	View

SCT3017ALHRC11

Part NumberSCT3017ALHRC11