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C2M0080170P


C2M0080170P

Part NumberC2M0080170P

Manufacturer

Description

Datasheet

Package / CaseTO-247-4

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

C2M0080170P - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package30
ManufacturerCree/Wolfspeed
SeriesC2M™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1700V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs125mOhm @ 28A, 20V
Vgs(th) (Max) @ Id4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs120nC @ 20V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds2250pF @ 1000V
FET Feature-
Power Dissipation (Max)277W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4

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