C2M0160120D
C2M0160120D
Part Number C2M0160120D Description MOSFET N-CH 1200V 19A TO-247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1200V 19A (Tc) 125W (Tc) Through Hole TO-247-3
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C2M0160120D - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet C2M0160120D Standard Package 30 Manufacturer Cree/Wolfspeed Series Z-FET™ Packaging Tube Part Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 196mOhm @ 10A, 20V Vgs(th) (Max) @ Id 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs 32.6nC @ 20V Vgs (Max) +25V, -10V Input Capacitance (Ciss) (Max) @ Vds 527pF @ 800V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3
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