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BSM180D12P2C101


BSM180D12P2C101

Part NumberBSM180D12P2C101

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Description

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Detailed Description

BSM180D12P2C101 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package12
ManufacturerRohm Semiconductor
Series-
PackagingBulk
Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C204A (Tc)
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds23000pF @ 10V
Power - Max1130W
Operating Temperature-40°C ~ 150°C (TJ)
Package / CaseModule
Supplier Device PackageModule

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