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EPC2100ENGRT


EPC2100ENGRT

Part NumberEPC2100ENGRT

Manufacturer

Description

Datasheet

Package / CaseDie

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Detailed Description

EPC2100ENGRT - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package500
ManufacturerEPC
SerieseGaN®
PackagingTape & Reel (TR)
Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds475pF @ 15V, 1960pF @ 15V
Power - Max-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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