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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SIZF920DT Datasheet
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Cut Tape (CT)
Part Status Active
FET Type 2 N-Channel (Dual), Schottky
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V, 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 15V, 5230pF @ 15V
Power - Max 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (6x5)
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ON Semiconductor, Mosfet Array 2 N-Channel (Dual) 80V 66A (Tc) 39W Surface Mount 8-Power 5x6,
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Texas Instruments, Mosfet Array 2 N-Channel (Half Bridge) 30V 40A 12W Surface Mount 8-LSON (5x6), NexFET™
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Toshiba Semiconductor and Storage, Mosfet Array 2 N-Channel (Dual) 60V 300mA 285mW Surface Mount US6,
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