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BSM180D12P3C007


BSM180D12P3C007

Part NumberBSM180D12P3C007

Manufacturer

Description

Datasheet

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Detailed Description

BSM180D12P3C007 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package12
ManufacturerRohm Semiconductor
Series-
PackagingBulk
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds900pF @ 10V
Power - Max880W
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Package / CaseModule
Supplier Device PackageModule

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