BSM180D12P3C007

Part NumberBSM180D12P3C007

ManufacturerRohm Semiconductor

DescriptionSIC POWER MODULE

DatasheetBSM180D12P3C007

Package / CaseModule

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 180A (Tc) 880W Surface Mount Module

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BSM180D12P3C007 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	BSM180D12P3C007
Standard Package	12
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Bulk
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 10V
Power - Max	880W
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Package / Case	Module
Supplier Device Package	Module

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