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BSM300D12P2E001


BSM300D12P2E001

Part NumberBSM300D12P2E001

Manufacturer

Description

Datasheet

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Lead TimeTo be Confirmed

Detailed Description

BSM300D12P2E001 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package4
ManufacturerRohm Semiconductor
Series-
PackagingTray
Part StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4V @ 68mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds35000pF @ 10V
Power - Max1875W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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