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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet PMCXB1000UE
Standard Package 1
Manufacturer Nexperia USA Inc.
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N and P-Channel Complementary
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 590mA (Ta), 410mA (Ta)
Rds On (Max) @ Id, Vgs 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.05nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 30.3pF @ 15V, 43.2pF @ 15V
Power - Max 285mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Supplier Device Package DFN1010B-6
PMCXB1000UEZ
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Toshiba Semiconductor and Storage, Mosfet Array 2 N-Channel (Dual) 20V 250mA (Ta) 285mW (Ta) Surface Mount US6,
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