BSS169H6327XTSA1
BSS169H6327XTSA1
Part Number BSS169H6327XTSA1
Description MOSFET N-CH 100V 170MA SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount SOT-23-3
To learn about the specification of BSS169H6327XTSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSS169H6327XTSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSS169H6327XTSA1.
We are offering BSS169H6327XTSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSS169H6327XTSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSS169
Standard Package 3000
Manufacturer Infineon Technologies
Series SIPMOS®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 7V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 68pF @ 25V
FET Feature Depletion Mode
Power Dissipation (Max) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
BSS169H6327XTSA1 - Related ProductsMore >>
SI4434DY-T1-E3
Vishay Siliconix, N-Channel 250V 2.1A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®
View
TK3A60DA(Q,M)
Toshiba Semiconductor and Storage, N-Channel 600V 2.5A (Ta) 30W (Tc) Through Hole TO-220SIS, π-MOSVII
View
IPB60R099C7ATMA1
Infineon Technologies, N-Channel 650V 22A (Tc) 110W (Tc) Surface Mount PG-TO263-3, CoolMOS™ C7
View
AOB190A60L
Alpha & Omega Semiconductor Inc., N-Channel 600V 20A (Tc) 208W (Tc) Surface Mount TO-263 (D2Pak),
View
IPD70R600P7SAUMA1
Infineon Technologies, N-Channel 700V 8.5A (Tc) 43W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
View
IRF2907ZPBF
Infineon Technologies, N-Channel 75V 160A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®
View
IPW65R110CFDFKSA1
Infineon Technologies, N-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3, CoolMOS™
View
SIHF12N60E-E3
Vishay Siliconix, N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack,
View
STU8N80K5
STMicroelectronics, N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-251, SuperMESH5™
View
SUD40N10-25-E3
Vishay Siliconix, N-Channel 100V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
View
STS6NF20V
STMicroelectronics, N-Channel 20V 6A (Tc) 2.5W (Tc) Surface Mount 8-SO, STripFET™ II
View
SIHP35N60EF-GE3
Vishay Siliconix, N-Channel 600V 32A (Tc) 250W (Tc) Through Hole TO-220AB, EF
View
BSS169H6327XTSA1 - Tags