TK3A60DA(Q,M)

Part NumberTK3A60DA(Q,M)

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TK3A60DA
Standard Package	50
Manufacturer	Toshiba Semiconductor and Storage
Series	π-MOSVII
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.8Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id	4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 25V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack

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