BST82,215
BST82,215
Part Number BST82,215 Description MOSFET N-CH 100V 190MA SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 190mA (Ta) 830mW (Tc) Surface Mount TO-236AB
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BST82,215 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BST82 Standard Package 1 Manufacturer Nexperia USA Inc. Series TrenchMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 190mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 10Ohm @ 150mA, 5V Vgs(th) (Max) @ Id 2V @ 1mA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V FET Feature - Power Dissipation (Max) 830mW (Tc) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3
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