BSZ12DN20NS3GATMA1
BSZ12DN20NS3GATMA1
Part Number BSZ12DN20NS3GATMA1 Description MOSFET N-CH 200V 11.3A 8TSDSON Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 11.3A (Tc) 50W (Tc) Surface Mount PG-TSDSON-8
To learn about the specification of BSZ12DN20NS3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSZ12DN20NS3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSZ12DN20NS3GATMA1.
We are offering BSZ12DN20NS3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSZ12DN20NS3GATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSZ12DN20NS3G Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 11.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 100V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8 Package / Case 8-PowerTDFN
BSZ12DN20NS3GATMA1 - Related ProductsMore >>
SSM3K336R,LF Toshiba Semiconductor and Storage, N-Channel 30V 3A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII-H
View
STP16NF06L STMicroelectronics, N-Channel 60V 16A (Tc) 45W (Tc) Through Hole TO-220AB, STripFET™ II
View
FCD9N60NTM ON Semiconductor, N-Channel 600V 9A (Tc) 92.6W (Tc) Surface Mount D-Pak, SupreMOS™
View
PSMN6R0-25YLDX Nexperia USA Inc., N-Channel 25V 61A (Tc) 43W (Tc) Surface Mount LFPAK56, Power-SO8,
View
IRFI4510GPBF Infineon Technologies, N-Channel 100V 35A (Tc) 42W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®
View
FDC3612 ON Semiconductor, N-Channel 100V 2.6A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®
View
IRFP31N50LPBF Vishay Siliconix, N-Channel 500V 31A (Tc) 460W (Tc) Through Hole TO-247-3,
View
SIR804DP-T1-GE3 Vishay Siliconix, N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SI2318DS-T1-E3 Vishay Siliconix, N-Channel 40V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
IRF7488TRPBF Infineon Technologies, N-Channel 80V 6.3A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
SIR688DP-T1-GE3 Vishay Siliconix, N-Channel 60V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
FDB13AN06A0 ON Semiconductor, N-Channel 60V 10.9A (Ta), 62A (Tc) 115W (Tc) Surface Mount D²PAK, PowerTrench®
View
BSZ12DN20NS3GATMA1 - Tags
English
