Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHP12N65E-GE3

SIHP12N65E-GE3

SIHP12N65E-GE3

Part NumberSIHP12N65E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 650V 12A TO-220AB

DatasheetSIHP12N65E-GE3

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 12A (Tc) 156W (Tc) Through Hole TO-220AB

To learn about the specification of SIHP12N65E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHP12N65E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHP12N65E-GE3.
We are offering SIHP12N65E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHP12N65E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHP12N65E-GE3
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1224pF @ 100V
FET Feature	-
Power Dissipation (Max)	156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

SIHP12N65E-GE3 - Related Products

	SSM3K56ACT,L3F	Toshiba Semiconductor and Storage, N-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount CST3, U-MOSVII-H	View
	DMN3009SFG-7	Diodes Incorporated, N-Channel 30V 16A (Ta), 45A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8,	View
	BUK9219-55A,118	Nexperia USA Inc., N-Channel 55V 55A (Tc) 114W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	TSM4NB65CP ROG	Taiwan Semiconductor Corporation, N-Channel 650V 4A (Tc) 70W (Tc) Surface Mount TO-252, (D-Pak),	View
	IXFA26N30X3	IXYS, N-Channel 300V 26A (Tc) 170W (Tc) Surface Mount TO-263AA, HiPerFET™	View
	SIR870DP-T1-GE3	Vishay Siliconix, N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	STF15N65M5	STMicroelectronics, N-Channel 650V 11A (Tc) 30W (Tc) Through Hole TO-220FP, MDmesh™ V	View
	IPD80R2K0P7ATMA1	Infineon Technologies, N-Channel 800V 3A (Tc) 24W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	FDPF33N25T	ON Semiconductor, N-Channel 250V 33A (Tc) 37W (Tc) Through Hole TO-220F, UniFET™	View
	IRFR1N60ATRPBF	Vishay Siliconix, N-Channel 600V 1.4A (Tc) 36W (Tc) Surface Mount D-Pak,	View
	IXTA15N50L2	IXYS, N-Channel 500V 15A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA), Linear L2™	View
	STW72N60DM2AG	STMicroelectronics, N-Channel 600V 66A (Tc) 446W (Tc) Through Hole TO-247, Automotive, AEC-Q101, MDmesh™ DM2	View

SIHP12N65E-GE3 - Tags

SIHP12N65E-GE3 SIHP12N65E-GE3 PDF SIHP12N65E-GE3 datasheet SIHP12N65E-GE3 specification SIHP12N65E-GE3 image SIHP12N65E-GE3 India Renesas Electronics India SIHP12N65E-GE3 buy SIHP12N65E-GE3 SIHP12N65E-GE3 price SIHP12N65E-GE3 distributor SIHP12N65E-GE3 supplier SIHP12N65E-GE3 wholesales