BSZ165N04NSGATMA1
BSZ165N04NSGATMA1
Part Number BSZ165N04NSGATMA1
Description MOSFET N-CH 40V 31A TSDSON-8
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 40V 8.9A (Ta), 31A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8
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BSZ165N04NSGATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSZ165N04NSG
Standard Package 5000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 8.9A (Ta), 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 16.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 20V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN
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