BSZ16DN25NS3GATMA1
BSZ16DN25NS3GATMA1
Part Number BSZ16DN25NS3GATMA1 Description MOSFET N-CH 250V 10.9A 8TSDSON Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 250V 10.9A (Tc) 62.5W (Tc) Surface Mount PG-TSDSON-8
To learn about the specification of BSZ16DN25NS3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSZ16DN25NS3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSZ16DN25NS3GATMA1.
We are offering BSZ16DN25NS3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSZ16DN25NS3GATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSZ16DN25NS3G Standard Package 5000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 10.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 165mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 32µA Gate Charge (Qg) (Max) @ Vgs 11.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 920pF @ 100V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8 Package / Case 8-PowerTDFN
BSZ16DN25NS3GATMA1 - Related ProductsMore >>
STB46NF30 STMicroelectronics, N-Channel 300V 42A (Tc) 300W (Tc) Surface Mount D2PAK, STripFET™ II
View
TK6R7P06PL,RQ Toshiba Semiconductor and Storage, N-Channel 60V 46A (Tc) 66W (Tc) Surface Mount DPAK, U-MOSIX-H
View
TSM80N1R2CH C5G Taiwan Semiconductor Corporation, N-Channel 800V 5.5A (Tc) 110W (Tc) Through Hole TO-251 (IPAK),
View
SIS110DN-T1-GE3 Vishay Siliconix, N-Channel 100V 5.2A (Ta), 14.2A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET® Gen IV
View
PMZ1000UN,315 Nexperia USA Inc., N-Channel 30V 480mA (Ta) 350mW (Ta) Surface Mount DFN1006-3,
View
CSD16410Q5A Texas Instruments, N-Channel 25V 16A (Ta), 59A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
View
IPAW60R600P7SXKSA1 Infineon Technologies, N-Channel 600V 6A (Tc) 21W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7
View
STD25NF20 STMicroelectronics, N-Channel 200V 18A (Tc) 110W (Tc) Surface Mount DPAK, STripFET™
View
DMN6040SVT-7 Diodes Incorporated, N-Channel 60V 5A (Ta) 1.2W (Ta) Surface Mount TSOT-26,
View
STD7NK40ZT4 STMicroelectronics, N-Channel 400V 5.4A (Tc) 70W (Tc) Surface Mount DPAK, SuperMESH™
View
IPB110N20N3LFATMA1 Infineon Technologies, N-Channel 200V 88A (Tc) 250W (Tc) Surface Mount PG-TO263-3, OptiMOS™ 3
View
IXFK170N20T IXYS, N-Channel 200V 170A (Tc) 1150W (Tc) Through Hole TO-264AA (IXFK), GigaMOS™
View
BSZ16DN25NS3GATMA1 - Tags
English
