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BSC027N10NS5ATMA1

BSC027N10NS5ATMA1

Part NumberBSC027N10NS5ATMA1

ManufacturerInfineon Technologies

DescriptionTRENCH >=100V

DatasheetBSC027N10NS5~

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 23A (Ta), 100A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TSON-8-3

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BSC027N10NS5ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSC027N10NS5~
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.8V @ 146µA
Gate Charge (Qg) (Max) @ Vgs	111nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8200pF @ 50V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSON-8-3
Package / Case	8-PowerTDFN

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