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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK6226-75C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR2905ZTRPBF
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RSJ301N10FRATL
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FQB33N10LTM
ON Semiconductor, N-Channel 100V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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TSM320N03CX RFG
Taiwan Semiconductor Corporation, N-Channel 30V 5.5A (Tc) 1.8W (Tc) Surface Mount SOT-23,
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BSC059N04LSGATMA1
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TK65S04N1L,LQ
Toshiba Semiconductor and Storage, N-Channel 40V 65A (Ta) 107W (Tc) Surface Mount DPAK+, U-MOSVIII-H
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IXTH450P2
IXYS, N-Channel 500V 16A (Tc) 300W (Tc) Through Hole TO-247 (IXTH), PolarP2™
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SIHG32N50D-GE3
Vishay Siliconix, N-Channel 500V 30A (Tc) 390W (Tc) Through Hole TO-247AC,
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BUK765R0-100E,118
Nexperia USA Inc., N-Channel 100V 120A (Tc) 357W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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IRFP260NPBF
Infineon Technologies, N-Channel 200V 50A (Tc) 300W (Tc) Through Hole TO-247AC, HEXFET®
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2N7002-T1-GE3
Vishay Siliconix, N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236,
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FQB4N80TM
ON Semiconductor, N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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