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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK663R2-40C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 8020pF @ 25V
FET Feature -
Power Dissipation (Max) 204W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
2N7000
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ON Semiconductor, N-Channel 20V 5.7A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®
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Toshiba Semiconductor and Storage, N-Channel 900V 9A (Ta) 50W (Tc) Through Hole TO-220SIS, π-MOSVIII
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Vishay Siliconix, N-Channel 100V 131A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), ThunderFET®
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Texas Instruments, N-Channel 12V 2.9A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
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IPP086N10N3GXKSA1
Infineon Technologies, N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO220-3, OptiMOS™
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CSD18541F5T
Texas Instruments, N-Channel 60V 2.2A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
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SQJ474EP-T1_GE3
Vishay Siliconix, N-Channel 100V 26A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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