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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK664R4-55C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 7750pF @ 25V
FET Feature -
Power Dissipation (Max) 204W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB80N03S4L03ATMA1
Infineon Technologies, N-Channel 30V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™
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NTMFS4C59NT1G
ON Semiconductor, N-Channel 30V 9A (Ta), 52A (Tc) 760mW (Ta) Surface Mount 5-DFN (5x6) (8-SOFL),
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SIHG47N60AEL-GE3
Vishay Siliconix, N-Channel 600V 47A (Tc) 379W (Tc) Through Hole TO-247AC, EL
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DMN601TK-7
Diodes Incorporated, N-Channel 60V 300mA (Ta) 150mW (Ta) Surface Mount SOT-523,
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STP11N60DM2
STMicroelectronics, N-Channel 600V 10A (Tc) 110W (Tc) Through Hole TO-220, MDmesh™ DM2
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IPB048N15N5ATMA1
Infineon Technologies, N-Channel 150V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3, OptiMOS™
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PSMN3R0-30YL,115
Nexperia USA Inc., N-Channel 30V 100A (Tc) 81W (Tc) Surface Mount LFPAK56, Power-SO8,
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BUK7208-40B,118
Nexperia USA Inc., N-Channel 40V 75A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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IXTH130N15X4
IXYS, N-Channel 150V 130A (Tc) 400W (Tc) Through Hole TO-247,
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IRLD120PBF
Vishay Siliconix, N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,
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RJ1U330AAFRGTL
Rohm Semiconductor, N-Channel 250V 33A (Ta) 211W (Tc) Surface Mount LPTS, Automotive, AEC-Q101
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BUK9217-75B,118
Nexperia USA Inc., N-Channel 75V 64A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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