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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK664R4-55C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 7750pF @ 25V
FET Feature -
Power Dissipation (Max) 204W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PSMN130-200D,118
Nexperia USA Inc., N-Channel 200V 20A (Tc) 150W (Tc) Surface Mount DPAK, TrenchMOS™
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AOD240
Alpha & Omega Semiconductor Inc., N-Channel 40V 23A (Ta), 70A (Tc) 2.7W (Ta), 150W (Tc) Surface Mount TO-252, (D-Pak),
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SIA432DJ-T1-GE3
Vishay Siliconix, N-Channel 30V 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
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Vishay Siliconix, N-Channel 40V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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