IPZ65R019C7XKSA1
IPZ65R019C7XKSA1
Part Number IPZ65R019C7XKSA1 Description MOSFET N-CH 650V TO247-4 Package / Case TO-247-4Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 75A (Tc) 446W (Tc) Through Hole PG-TO247-4
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IPZ65R019C7XKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPZ65R019C7 Standard Package 240 Manufacturer Infineon Technologies Series CoolMOS™ C7 Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 19mOhm @ 58.3A, 10V Vgs(th) (Max) @ Id 4V @ 2.92mA Gate Charge (Qg) (Max) @ Vgs 215nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 400V FET Feature - Power Dissipation (Max) 446W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-4 Package / Case TO-247-4
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