DMN3020UTS-13

Part NumberDMN3020UTS-13

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMN3020UTS
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	20mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27nC @ 8V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1304pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.4W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSSOP
Package / Case	8-TSSOP (0.173", 4.40mm Width)

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IRFZ44EPBF	Infineon Technologies, N-Channel 60V 48A (Tc) 110W (Tc) Through Hole TO-220AB, HEXFET®	View
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