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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7210-55B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2453pF @ 25V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 185°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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STMicroelectronics, N-Channel 900V 3A (Tc) 25W (Tc) Through Hole TO-220FP, SuperMESH™
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PMV20XNEAR
Nexperia USA Inc., N-Channel 20V 6.3A (Ta) 460mW (Ta), 6.94W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101
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NTMFS6B05NT1G
ON Semiconductor, N-Channel 100V 16A (Ta), 104A (Tc) 3.3W (Ta), 138W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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FDD8778
ON Semiconductor, N-Channel 25V 35A (Tc) 39W (Tc) Surface Mount TO-252AA, PowerTrench®
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FDS8447
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IRFUC20PBF
Vishay Siliconix, N-Channel 600V 2A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,
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IPB020N10N5LFATMA1
Infineon Technologies, N-Channel 100V 120A (Tc) 313W (Tc) Surface Mount PG-TO263-3, OptiMOS™-5
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SIRA06DP-T1-GE3
Vishay Siliconix, N-Channel 30V 40A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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IXFH42N60P3
IXYS, N-Channel 600V 42A (Tc) 830W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, Polar3™
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IXFH22N60P3
IXYS, N-Channel 600V 22A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, Polar3™
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BUK7Y08-40B,115
Nexperia USA Inc., N-Channel 40V 75A (Tc) 105W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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FQP33N10
ON Semiconductor, N-Channel 100V 33A (Tc) 127W (Tc) Through Hole TO-220-3, QFET®
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