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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STH315N10F7-2,STH315N10F7-6
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12800pF @ 25V
FET Feature -
Power Dissipation (Max) 315W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TSM045NB06CR RLG
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AOI4286
Alpha & Omega Semiconductor Inc., N-Channel 100V 4A (Ta), 14A (Tc) 2.5W (Ta), 30W (Tc) Through Hole TO-251A,
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Vishay Siliconix, N-Channel 250V 4.4A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D2PAK,
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2N6660
Microchip Technology, N-Channel 60V 410mA (Ta) 6.25W (Tc) Through Hole TO-39,
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Vishay Siliconix, N-Channel 400V 10A (Tc) 125W (Tc) Surface Mount,
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