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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7227-100B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2789pF @ 25V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 185°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SIR622DP-T1-RE3
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SI7862ADP-T1-E3
Vishay Siliconix, N-Channel 16V 18A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
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BSZ100N06NSATMA1
Infineon Technologies, N-Channel 60V 40A (Tc) 2.1W (Ta), 36W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™
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TSM80N400CF C0G
Taiwan Semiconductor Corporation, N-Channel 800V 12A (Tc) 69W (Tc) Through Hole ITO-220S,
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BSC037N08NS5ATMA1
Infineon Technologies, N-Channel 80V 100A (Tc) 2.5W (Ta), 114W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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BUK9Y22-30B,115
Nexperia USA Inc., N-Channel 30V 37.7A (Tc) 59.4W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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STMicroelectronics, N-Channel 1700V 2.6A (Tc) 63W (Tc) Through Hole ISOWATT-218FX, PowerMESH™
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SQJ850EP-T1_GE3
Vishay Siliconix, N-Channel 60V 24A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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SSM3K329R,LF
Toshiba Semiconductor and Storage, N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIII
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NVMFS5C468NT1G
ON Semiconductor, N-Channel 40V 12A (Ta), 35A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101
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