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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STH410N4F7-2AG, STH410N4F7-6AG Standard Package 1000 Manufacturer STMicroelectronics Series Automotive, AEC-Q101, STripFET™ F7 Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.1mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11500pF @ 25V FET Feature - Power Dissipation (Max) 365W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H2PAK-6 Package / Case TO-263-7, D²Pak (6 Leads + Tab)
FDBL0110N60 ON Semiconductor, N-Channel 60V 300A (Tc) 429W (Tj) Surface Mount 8-HPSOF, PowerTrench®
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FDD1600N10ALZ ON Semiconductor, N-Channel 100V 6.8A (Tc) 14.9W (Tc) Surface Mount TO-252, (D-Pak), PowerTrench®
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TK6A60D(STA4,Q,M) Toshiba Semiconductor and Storage, N-Channel 600V 6A (Ta) 40W (Tc) Through Hole TO-220SIS, π-MOSVII
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DMT6009LCT Diodes Incorporated, N-Channel 60V 37.2A (Tc) 2.2W (Ta), 25W (Tc) Through Hole TO-220AB,
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SIHP100N60E-GE3 Vishay Siliconix, N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-220AB,
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IRLI2910PBF Infineon Technologies, N-Channel 100V 31A (Tc) 63W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®
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BSZ110N08NS5ATMA1 Infineon Technologies, N-Channel 80V 40A (Tc) 50W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™
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AO4402 Alpha & Omega Semiconductor Inc., N-Channel 20V 20A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,
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STWA40N95K5 STMicroelectronics, N-Channel 950V 38A (Tc) 450W (Tc) Through Hole TO-247-3, MDmesh™
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SUG90090E-GE3 Vishay Siliconix, N-Channel 200V 100A (Tc) 395W (Tc) Through Hole TO-247AC, ThunderFET®
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IRLR110PBF Vishay Siliconix, N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,
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BSN20-7 Diodes Incorporated, N-Channel 50V 500mA (Ta) 600mW (Ta) Surface Mount SOT-23,
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