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FDD6612A

FDD6612A

Part NumberFDD6612A

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 30V 9.5A DPAK

DatasheetFDD6612A, FDU6612A

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 9.5A (Ta), 30A (Tc) 2.8W (Ta), 36W (Tc) Surface Mount D-PAK (TO-252)

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FDD6612A - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FDD6612A, FDU6612A
Standard Package	1
Manufacturer	ON Semiconductor
Series	PowerTrench®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	9.5A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	20mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.4nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 36W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-PAK (TO-252)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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