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FQPF630

FQPF630

Part NumberFQPF630

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 6.3A TO-220F

DatasheetFQPF630

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 6.3A (Tc) 38W (Tc) Through Hole TO-220F

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FQPF630 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FQPF630
Standard Package	1000
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	400mOhm @ 3.15A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 25V
FET Feature	-
Power Dissipation (Max)	38W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F
Package / Case	TO-220-3 Full Pack

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