Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHH21N60E-T1-GE3

SIHH21N60E-T1-GE3

SIHH21N60E-T1-GE3

Part NumberSIHH21N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 20A POWERPAK8X8

DatasheetSIHH21N60E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 20A (Tc) 104W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SIHH21N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHH21N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHH21N60E-T1-GE3.
We are offering SIHH21N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHH21N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHH21N60E
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	176mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	83nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2015pF @ 100V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

SIHH21N60E-T1-GE3 - Related Products

	APT24F50B	Microsemi Corporation, N-Channel 500V 24A (Tc) 335W (Tc) Through Hole TO-247 [B], POWER MOS 8™	View
	R6020FNJTL	Rohm Semiconductor, N-Channel 600V 20A (Tc) 50W (Tc) Surface Mount LPTS,	View
	DMN30H4D0L-7	Diodes Incorporated, N-Channel 300V 250mA (Ta) 310mW (Ta) Surface Mount SOT-23,	View
	IXFN170N65X2	IXYS, N-Channel 650V 170A (Tc) 1170W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	BSC0902NSATMA1	Infineon Technologies, N-Channel 30V 24A (Ta), 100A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™	View
	FDMS8670S	ON Semiconductor, N-Channel 30V 20A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
	IXFX80N50Q3	IXYS, N-Channel 500V 80A (Tc) 1250W (Tc) Through Hole PLUS247™-3, HiPerFET™	View
	BUK9Y29-40E,115	Nexperia USA Inc., N-Channel 40V 25A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	SIHH20N50E-T1-GE3	Vishay Siliconix, N-Channel 500V 22A (Tc) 174W (Tc) Surface Mount PowerPAK® 8 x 8,	View
	2N7002BKW,115	Nexperia USA Inc., N-Channel 60V 310mA (Ta) 275mW (Ta) Surface Mount SC-70, Automotive, AEC-Q101, TrenchMOS™	View
	PSMN011-60MLX	Nexperia USA Inc., N-Channel 60V 61A (Tc) 91W (Tc) Surface Mount LFPAK33,	View
	SI7892BDP-T1-E3	Vishay Siliconix, N-Channel 30V 15A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View

SIHH21N60E-T1-GE3 - Tags

SIHH21N60E-T1-GE3 SIHH21N60E-T1-GE3 PDF SIHH21N60E-T1-GE3 datasheet SIHH21N60E-T1-GE3 specification SIHH21N60E-T1-GE3 image SIHH21N60E-T1-GE3 India Renesas Electronics India SIHH21N60E-T1-GE3 buy SIHH21N60E-T1-GE3 SIHH21N60E-T1-GE3 price SIHH21N60E-T1-GE3 distributor SIHH21N60E-T1-GE3 supplier SIHH21N60E-T1-GE3 wholesales