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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK965R4-40E
Standard Package 800
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33.9nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 4483pF @ 25V
FET Feature -
Power Dissipation (Max) 137W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Infineon Technologies, N-Channel 25V 24A (Ta), 75A (Tc) 2.2W (Ta), 28W (Tc) Surface Mount MG-WDSON-2, CanPAK M™, OptiMOS™
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Vishay Siliconix, N-Channel 500V 8.8A (Tc) 150W (Tc) Through Hole TO-247-3,
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CSD17310Q5A
Texas Instruments, N-Channel 30V 21A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
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