Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXTN200N10L2

IXTN200N10L2

IXTN200N10L2

Part NumberIXTN200N10L2

ManufacturerIXYS

DescriptionMOSFET N-CH 100V 178A SOT-227

DatasheetIXTN200N10L2

Package / CaseSOT-227-4, miniBLOC

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 178A (Tc) 830W (Tc) Chassis Mount SOT-227B

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IXTN200N10L2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXTN200N10L2
Standard Package	10
Manufacturer	IXYS
Series	Linear L2™
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	178A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs	540nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	23000pF @ 25V
FET Feature	-
Power Dissipation (Max)	830W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC

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IXTN200N10L2 - Tags

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