IPD30N06S2L13ATMA4
IPD30N06S2L13ATMA4
Part Number IPD30N06S2L13ATMA4 Description MOSFET N-CH 55V 30A TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 55V 30A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
To learn about the specification of IPD30N06S2L13ATMA4, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD30N06S2L13ATMA4 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD30N06S2L13ATMA4.
We are offering IPD30N06S2L13ATMA4 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPD30N06S2L13ATMA4 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD30N06S2L-13 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 13mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V FET Feature - Power Dissipation (Max) 136W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-11 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPD30N06S2L13ATMA4 - Related ProductsMore >>
IRFBC20STRLPBF Vishay Siliconix, N-Channel 600V 2.2A (Tc) 3.1W (Ta), 50W (Tc) Surface Mount D2PAK,
View
FDMC8854 ON Semiconductor, N-Channel 30V 15A (Tc) 2W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®
View
FQPF7N65CYDTU ON Semiconductor, N-Channel 650V 7A (Tc) 52W (Tc) Through Hole TO-220F-3 (Y-Forming), QFET®
View
FDS5670 ON Semiconductor, N-Channel 60V 10A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
IXFX180N25T IXYS, N-Channel 250V 180A (Tc) 1390W (Tc) Through Hole PLUS247™-3, GigaMOS™
View
IPI024N06N3GXKSA1 Infineon Technologies, N-Channel 60V 120A (Tc) 250W (Tc) Surface Mount PG-TO262-3-1, OptiMOS™
View
STD6NF10T4 STMicroelectronics, N-Channel 100V 6A (Tc) 30W (Tc) Surface Mount DPAK, STripFET™
View
FDP39N20 ON Semiconductor, N-Channel 200V 39A (Tc) 251W (Tc) Through Hole TO-220-3, UniFET™
View
BSS138LT1G ON Semiconductor, N-Channel 50V 200mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
TSM9N90ECZ C0G Taiwan Semiconductor Corporation, N-Channel 900V 9A (Tc) 89W (Tc) Through Hole TO-220,
View
HUF76609D3ST ON Semiconductor, N-Channel 100V 10A (Tc) 49W (Tc) Surface Mount TO-252AA, UltraFET™
View
IRFU320PBF Vishay Siliconix, N-Channel 400V 3.1A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,
View
IPD30N06S2L13ATMA4 - Tags
English
