Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2308BDS-T1-GE3

SI2308BDS-T1-GE3

SI2308BDS-T1-GE3

Part NumberSI2308BDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 2.3A SOT23-3

DatasheetSI2308BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2308BDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2308BDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2308BDS-T1-GE3.
We are offering SI2308BDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2308BDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2308BDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	156mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.8nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 30V
FET Feature	-
Power Dissipation (Max)	1.09W (Ta), 1.66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2308BDS-T1-GE3 - Related Products

	FDD390N15ALZ	ON Semiconductor, N-Channel 150V 26A (Tc) 63W (Tc) Surface Mount DPAK, PowerTrench®	View
	FDB14AN06LA0-F085	ON Semiconductor, N-Channel 60V 67A (Tc) 125W (Tc) Surface Mount TO-263AB, Automotive, AEC-Q101, PowerTrench®	View
	R6020KNZ1C9	Rohm Semiconductor, N-Channel 600V 20A (Tc) 231W (Tc) Through Hole TO-247,	View
	STF7N80K5	STMicroelectronics, N-Channel 800V 6A (Tc) 25W (Tc) Through Hole TO-220FP, SuperMESH5™	View
	IPB011N04LGATMA1	Infineon Technologies, N-Channel 40V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™	View
	SIHA100N60E-GE3	Vishay Siliconix, N-Channel 600V 30A (Tc) 35W (Tc) Through Hole TO-220 Full Pack,	View
	DMN3067LW-7	Diodes Incorporated, N-Channel 30V 2.6A (Ta) 500mW (Ta) Surface Mount SOT-323,	View
	TSM4NB60CP ROG	Taiwan Semiconductor Corporation, N-Channel 600V 4A (Tc) 50W (Tc) Surface Mount TO-252, (D-Pak),	View
	CSD17577Q3AT	Texas Instruments, N-Channel 30V 35A (Ta) 2.8W (Ta), 53W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™	View
	SI4490DY-T1-GE3	Vishay Siliconix, N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®	View
	BUK7Y14-80EX	Nexperia USA Inc., N-Channel 80V 65A (Tc) 147W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	STB12NK80ZT4	STMicroelectronics, N-Channel 800V 10.5A (Tc) 190W (Tc) Surface Mount D2PAK, SuperMESH™	View

SI2308BDS-T1-GE3 - Tags

SI2308BDS-T1-GE3 SI2308BDS-T1-GE3 PDF SI2308BDS-T1-GE3 datasheet SI2308BDS-T1-GE3 specification SI2308BDS-T1-GE3 image SI2308BDS-T1-GE3 India Renesas Electronics India SI2308BDS-T1-GE3 buy SI2308BDS-T1-GE3 SI2308BDS-T1-GE3 price SI2308BDS-T1-GE3 distributor SI2308BDS-T1-GE3 supplier SI2308BDS-T1-GE3 wholesales