IRLS640A
IRLS640A
Part Number IRLS640A Description MOSFET N-CH 200V 9.8A TO-220F Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 9.8A (Tc) 40W (Tc) Through Hole TO-220F
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IRLS640A - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLS640A Standard Package 1000 Manufacturer ON Semiconductor Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 9.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 180mOhm @ 4.9A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 56nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1705pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack
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